Crystal Orientation Dependence of Gallium Nitride Wear

Ultralow wear of gallium nitride

Moisture dependent wear mechanisms of gallium nitride

Ultralow wear nature of gallium nitride (GaN) has been revealed recently. The wear rate for GaN has a significant dependence on humidity, ranging from 9 10 9 mm3/Nm to 9.5 10 7 mm3/Nm; the mechanisms responsible for this variation in wear remain unclear. Here, we performed reciprocal sliding test on GaN under different environments and characterized the chemical compositions of corresponding wo...

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitr...

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

GaN-based materials are well-recognized for their exceptional optical qualities, particularly in the blue and UV parts of the spectrum. In addition, their wide bandgaps allow efficient operation at room temperature and higher. This work will describe the room-temperature performance of optically-pumped GaN photonic crystal (PC) nanobeam lasers, with thresholds as low as 9.1 μJ/cm2, the lowest r...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...